트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 544/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 200V 98A PLUS220 |
2,124 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 98A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 600V 18A TO-263AA |
6,084 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 230mOhm @ 9A, 10V | 4.5V @ 1.5mA | 35nC @ 10V | ±30V | 1440pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V TO247 |
6,732 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE |
2,448 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 102A PLUS220 |
5,202 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 102A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | PLUS220 | TO-220-3, Short Tab |
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|
IXYS |
MOSFET N-CH 150V 130A PLUS220 |
3,132 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 300V 72A PLUS220 |
8,082 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 500V 26A TO-268 |
6,894 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5.5V @ 250µA | 65nC @ 10V | ±30V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 12A TO-247 |
5,922 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 4080pF @ 25V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 30A TO-3P |
2,448 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 4150pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 600V 26A TO-3P |
7,200 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 270mOhm @ 500mA, 10V | 5V @ 250µA | 72nC @ 10V | ±30V | 4150pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 100V 110A TO-268 |
6,156 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 15mOhm @ 500mA, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 3550pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 800V 16A PLUS220 |
2,592 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 600mOhm @ 500mA, 10V | 5V @ 4mA | 71nC @ 10V | ±30V | 4600pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 800V 14A TO-268 |
6,714 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 720mOhm @ 500mA, 10V | 5.5V @ 4mA | 61nC @ 10V | ±30V | 3900pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 53A TO247 |
7,704 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59nC @ 10V | ±30V | 3034pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
3,870 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 3.8V @ 250µA | 59nC @ 10V | ±30V | 3034pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 230A TO-247 |
4,644 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 230A (Tc) | 10V | 4.7mOhm @ 500mA, 10V | 4.5V @ 1mA | 250nC @ 10V | ±20V | 15300pF @ 25V | - | 650W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 57.7A TO220 |
8,100 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 57.7A (Tc) | 10V | 74mOhm @ 21A, 10V | 3.5V @ 1.4mA | 138nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
5,418 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
MOSFET N-CH 800V 12A TO-247 |
4,086 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2471pF @ 25V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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|
IXYS |
MOSFET N-CH 1200V 3A TO-247 |
8,064 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 4.5V @ 250µA | 39nC @ 10V | ±20V | 1300pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 42A TO3P |
4,446 |
|
PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 145mOhm @ 500mA, 10V | 4.5V @ 250µA | 88nC @ 10V | ±30V | 5400pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
IXYS |
MOSFET P-CH 200V 32A TO-220 |
2,862 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185nC @ 10V | ±15V | 14500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 60A TO-247 |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 60A (Tc) | 10V | 33mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3000pF @ 25V | - | 275W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH |
8,046 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 9mOhm @ 65A, 10V | 4.5V @ 1.5mA | 80nC @ 10V | ±20V | 5230pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 160A TO-247 |
4,032 |
|
GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 160A (Tc) | 10V | 9mOhm @ 80A, 10V | 4.5V @ 1mA | 253nC @ 10V | ±20V | 15000pF @ 25V | - | 880W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
IXYS |
MOSFET N-CH 650V 20A TO-220 |
2,430 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35nC @ 10V | ±30V | 1390pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 30A TO-268 D3 |
4,824 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 5V @ 4mA | 70nC @ 10V | ±30V | 4150pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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|
IXYS |
MOSFET N-CH 600V 26A TO-268 D3 |
3,276 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 270mOhm @ 500mA, 10V | 5V @ 4mA | 72nC @ 10V | ±30V | 4150pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 15A ISOPLUS220 |
3,546 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 190mOhm @ 16A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |