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제너 다이오드-단일

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카테고리반도체 / 다이오드 및 정류기 / 제너 다이오드-단일
기록 42,973
페이지 615/1433
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
전압-제너 (Nom) (Vz)
공차
전력-최대
임피던스 (최대) (Zzt)
전류-역방향 누설 @ Vr
전압-순방향 (Vf) (최대) @ If
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
BZG05B9V1-HM3-18
Vishay Semiconductor Diodes Division
DIODE ZENER 9.1V 1.25W DO214AC
7,866
Automotive, AEC-Q101, BZG05B-M
9.1V
±1.98%
1.25W
5 Ohms
1µA @ 6.8V
1.2V @ 200mA
150°C (TJ)
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
1N5985B BK
Central Semiconductor Corp
DIODE ZENER 2.4V 500MW DO35
3,294
-
2.4V
±5%
500mW
100 Ohms
100µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5986B BK
Central Semiconductor Corp
DIODE ZENER 2.7V 500MW DO35
3,132
-
2.7V
±5%
500mW
100 Ohms
75µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5987B BK
Central Semiconductor Corp
DIODE ZENER 3V 500MW DO35
4,878
-
3V
±5%
500mW
95 Ohms
50µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5988B BK
Central Semiconductor Corp
DIODE ZENER 3.3V 500MW DO35
3,006
-
3.3V
±5%
500mW
95 Ohms
25µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5989B BK
Central Semiconductor Corp
DIODE ZENER 3.6V 500MW DO35
6,984
-
3.6V
±5%
500mW
90 Ohms
15µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5990B BK
Central Semiconductor Corp
DIODE ZENER 3.9V 500MW DO35
7,272
-
3.9V
±5%
500mW
90 Ohms
10µA @ 1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5992B BK
Central Semiconductor Corp
DIODE ZENER 4.7V 500MW DO35
4,860
-
4.7V
±5%
500mW
70 Ohms
3µA @ 1.5V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5993B BK
Central Semiconductor Corp
DIODE ZENER 5.1V 500MW DO35
2,916
-
5.1V
±5%
500mW
50 Ohms
2µA @ 2V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5994B BK
Central Semiconductor Corp
DIODE ZENER 5.6V 500MW DO35
8,550
-
5.6V
±5%
500mW
25 Ohms
2µA @ 3V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5995B BK
Central Semiconductor Corp
DIODE ZENER 6.2V 500MW DO35
7,740
-
6.2V
±5%
500mW
10 Ohms
1µA @ 4V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5996B BK
Central Semiconductor Corp
DIODE ZENER 6.8V 500MW DO35
7,092
-
6.8V
±5%
500mW
8 Ohms
1µA @ 5.2V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5998B BK
Central Semiconductor Corp
DIODE ZENER 8.2V 500MW DO35
6,768
-
8.2V
±5%
500mW
7 Ohms
500nA @ 6.5V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N5999B BK
Central Semiconductor Corp
DIODE ZENER 9.1V 500MW DO35
2,790
-
9.1V
±5%
500mW
10 Ohms
100nA @ 7V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6000B BK
Central Semiconductor Corp
DIODE ZENER 10V 500MW DO35
3,438
-
10V
±5%
500mW
15 Ohms
100nA @ 8V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6002B BK
Central Semiconductor Corp
DIODE ZENER 12V 500MW DO35
6,966
-
12V
±5%
500mW
22 Ohms
100nA @ 9.1V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6004B BK
Central Semiconductor Corp
DIODE ZENER 15V 500MW DO35
5,670
-
15V
±5%
500mW
32 Ohms
100nA @ 11V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6006B BK
Central Semiconductor Corp
DIODE ZENER 18V 500MW DO35
4,464
-
18V
±5%
500mW
42 Ohms
100nA @ 14V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6009B BK
Central Semiconductor Corp
DIODE ZENER 24V 500MW DO35
5,382
-
24V
±5%
500mW
62 Ohms
100nA @ 18V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6012B BK
Central Semiconductor Corp
DIODE ZENER 33V 500MW DO35
8,568
-
33V
±5%
500mW
88 Ohms
100µA @ 25V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
1N6013B BK
Central Semiconductor Corp
DIODE ZENER 36V 500MW DO35
7,884
-
36V
±5%
500mW
95 Ohms
100µA @ 27V
1.5V @ 100mA
-65°C ~ 200°C (TJ)
Through Hole
DO-204AH, DO-35, Axial
DO-35
CMZ12(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
9,751
-
12V
±10%
2W
30 Ohms
10µA @ 8V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ13(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
2,088
-
13V
±10%
2W
30 Ohms
10µA @ 9V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ15(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
4,374
-
15V
±10%
2W
30 Ohms
10µA @ 10V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ16(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
2,664
-
16V
±10%
2W
30 Ohms
10µA @ 11V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ18(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
2,826
-
18V
±10%
2W
30 Ohms
10µA @ 13V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ20(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
3,852
-
20V
±10%
2W
30 Ohms
10µA @ 14V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ22(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
2,430
-
22V
±10%
2W
30 Ohms
10µA @ 16V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ24(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
6,948
-
24V
±10%
2W
30 Ohms
10µA @ 17V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
CMZ27(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
8,424
-
27V
±10%
2W
30 Ohms
10µA @ 19V
1.2V @ 200mA
-40°C ~ 150°C (TJ)
Surface Mount
SOD-128
M-FLAT (2.4x3.8)