트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 665/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 75V 130A D2PAK |
3,546 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 96A D2PAK |
5,994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK |
2,268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK |
3,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 180A TO-262 |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7600pF @ 50V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-262 |
4,878 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-262 |
2,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 96A TO-262 |
2,196 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262 |
3,960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262 |
4,554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK7 |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
8,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
4,572 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
6,264 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
6,966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 97A D2PAK |
3,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
8,262 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
5,976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 23A DIRECTFET |
2,880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | ±20V | 5950pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8-SOIC |
3,960 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | ±8V | 8676pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
HEX/MOS N-CH 30V 11A 8-SOIC |
3,204 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 770pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK7 |
3,330 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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ON Semiconductor |
MOSFET N-CH 52V 2.6A SOT223 |
3,852 |
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- | N-Channel | MOSFET (Metal Oxide) | 52V | 2.6A (Ta) | 3V, 10V | 125mOhm @ 2.6A, 10V | 2.5V @ 100µA | 7nC @ 4.5V | ±15V | 250pF @ 35V | - | 1.69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Rohm Semiconductor |
MOSFET N-CH 60V 10A TO-220FN |
6,894 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 4V, 10V | 95mOhm @ 5A, 10V | 2.5V @ 1mA | - | ±20V | 1600pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 450V 7A TO-220FN |
3,186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 7A (Ta) | 10V | 1.1Ohm @ 4A, 10V | 4V @ 1mA | - | ±30V | 870pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 450V 5A TO-220FN |
3,240 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 5A (Ta) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±30V | 600pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A TO-220FN |
6,336 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 1.2Ohm @ 4A, 10V | 4V @ 1mA | - | ±30V | 1050pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 10A TO-220FN |
3,384 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 10A (Ta) | 10V | 360mOhm @ 5A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 543pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |