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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 545/1553
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC FLASH 64G MMC |
1,444 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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|
IDT, Integrated Device Technology |
IC SRAM 8K PARALLEL 64TQFP |
4,500 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 25ns | 25ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2,340 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3,508 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
3,600 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 4G PARALLEL 78FBGA |
4,932 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - DDR3L | 4Gb (512M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (9x10.5) |
|
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|
Micron Technology Inc. |
SLC EMMC/LPDDR2 36G |
3,580 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
|
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|
Micron Technology Inc. |
IC DRAM 8G 1600MHZ |
4,446 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1600MHz | - | - | 1.1V | -30°C ~ 105°C (TC) | - | - | - |
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|
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
3,582 |
|
Automotive, AEC-Q100 | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (512M x 16) | - | 2.133GHz | - | - | - | -30°C ~ 85°C (TC) | Surface Mount | - | - |
|
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|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
8,100 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1.866GHz | - | - | 0.6V, 1.1V | -30°C ~ 85°C | Surface Mount | - | - |
|
|
|
Everspin Technologies Inc. |
IC RAM 4M SPI 40MHZ 8DFN |
3,996 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 4Mb (512K x 8) | SPI | 40MHz | - | - | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP, Large Flag (5x6) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
5,400 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
7,902 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | 15ns | 19ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.6GHZ |
4,446 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (512M x 16) | Parallel | 1.6GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 8K PARALLEL 64TQFP |
3,708 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (10x10) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
7,938 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
8,496 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
|
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|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
8,064 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 120ns | 120ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
98 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 150ns | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
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|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
6,750 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 150ns | 150ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
2,592 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
6,390 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
7,213 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
5,274 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
45 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
8,370 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
2,790 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
702 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.600", 15.24mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
7,704 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 16K PARALLEL 24CDIP |
5,454 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Kb (2K x 8) | Parallel | - | 90ns | 90ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 24-CDIP (0.300", 7.62mm) | 24-CDIP |